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AS 9100 : 2009,
REV C / ISO 9001 : 2008 Certified

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Services

Silicon
  • Diameters 25.4 mm-150.0 mm
  • Growth Methods
  • Cz .001-100 ohm-cm
  • Fz 100-10,000 ohm-cm
  • Orientations (100) (111) (110)
  • Thickness 10-10,000 microns
  • MEMS 10-200 microns
  • Semi-Standard 200-1000 microns
  • Thick Slabs 1,000-10,000 microns
  • Surface one or two side polish
  • TTV < 1 micron
  • Services
  • Etching, Lapping, Backgrinding
  • Oxide and Nitride Depositions
GaAs, InP Reclaim
  • Diameters 25.4 mm-150.0 mm
  • Major cost Savings!
  • Quantities 50-1,000 per order
  • Surface one or two side polish
  • Orientations (100) (111) (110)
  • Green Technology Recycle up to 3X
Germanium
  • Diameters 25.4 mm-150.0 mm
  • Resistivity .001-50 ohm-cm
  • Orientations (100) (111) (110)
  • Thickness 100-10,000 microns
  • Surface one or two side polish
  • Reclaim service
  • EPI Solar grade quality polish
Other Materials
III-V WafersII-VI WafersOptic WafersSuperconductor Wafers
InPZnOYVO4MgO
GaPZnSeTiO2YSZ
InSbCdSCaCO3SrTiO3
InAsCdTeLiNbO3KTaO3