Phone: 561-842-4441 1100 Technology Place, Suite 104 - West Palm Beach, FL 33407 Fax: 561-842-2677
Welcome To Wafer World Technical Group!
Our world-class technical support group is very happy to answer any technical questions, discuss difficult issues and help you to solve problems. We can speak two different languages, English and Spanish.
Harvey Kitzmiller and Mr. Pedro Hernandez have many years of experience with technical support. We have been working closely with universities and research institutes around the world and catering to their needs and solving the problems.
We can supply our customers with different wafers, such as Si, Ge and GaAs, etc. We are also very happy to help you with ordering small quantities of wafers with special materials and specifications.
Wafer World is well known in the world for reclaming of compound semiconductor material, GaAs. With globalization of the economy, the competition between the competitors is becoming more and more tight. People are more concerned about the quality of the products and processing cost. We are here to help you achieve this goal. The reclaimed GaAs wafers can be used as test grade for varied applications. Our standard process is: (1) Metal and epitaxy layers on top of wafer substrates are stripped. (2) Wafers are polished and cleaned. (3) After inspection, the wafers are packaged in a clean room.
We also have a strong R & D team that is developing a new process for reclaiming very expensive wafers, such as InP, sapphire, SiC and GaN.
If you have any questions or comments, please feel free to contact me, Harvey Kitzmiller at (561) 842-4441 or send me an email harvey@waferworld.com
Thank you,
Harvey Kitzmiller
Process Engineer
Silicon Wafers
|
Symbol: |
Si |
|
Atomic Weight: |
28.086 |
|
Atomic Number: |
14 |
|
Crystalline Structure: |
Cubic |
|
Crystal Lattice Constants at 25oC: |
5.43072 +/- 0.00001 Å |
Physical and Critical Constants of Silicon
|
Density at 25°C |
2.3283 +/- 0.0003 gm/cm3 |
|
Number of Atoms per cm3 |
4.99 x 1022 |
|
Melting Point |
1417 +/- 4° C |
|
Mohs Hardness |
7 |
|
Specific Heat |
4.65 cal/mol° C |
|
Specific Heat (as a function of temperature expressed in oK:273o<T<1147)o |
Cp= 5.74+0.617 x 10-3 T-1.01 x 109 xT-2 +/-2% |
|
Latent Heat of Fusion |
11950 +/- 180 cal/mol |
|
Latent Heat of Sublimation at 1277oC |
105000 +/- 12000 cal/mol |
Thermal Conductivity of Silicon
|
-271oC |
0.3 W/cm° C |
|
-263oC |
12 W/cm° C |
|
-253oC |
17 W/cm° C |
|
-223oC |
13 W/cm° C |
|
-73oC |
2.5 W/cm° C |
|
+27oC |
1.3 W/cm° C |
|
Coefficient of linear Expansion at 27oC |
+2.33 x 10-6 cm/° C |
|
Compressibility |
0.98 x 10-12 cm2/dyne |
|
Intrinsic Resistivity at 27oC |
230000 ohm cm |
|
Refractive Index by l = 589 mm at 26oC |
3.42 |
|
Magnetic Susceptibility at 17oC |
-0.111 x 10-6 unit cgs |
|
Energy Gap at 22oC |
+1.107 eV |
|
Intrinsic Concentration at 27oC |
Np = 2.2 x 1020 cm-6 |
|
Electron Mobility at 27oC |
1300 (T/300)-2.6 cm2/V.sec |
|
Hole Mobility at 27oC |
500 (T/300)-2.3 cm2/V.sec |
|
Electron Diffusion Constant at 27oC |
35 cm2/sec |
|
Hole Diffusion Constant at 27oC |
13.1 cm2/sec |
|
Dielectric Constant at 1 megacycle/sec |
11.7 +/- 0.02 cm2/sec |
Clean Room Packaging