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Quantity
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50 Min.
1
3
5
7
9
10
25
Material
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Silicon
GaAs
Ge
Sapphire
InP
Clean Room
Diameter
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101.6 mm
25.4 mm
38.1 mm
50.8 mm
76.2 mm
100.0 mm
125.0 mm
150.0 mm
200.0 mm
Type
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Round
SI.
N
P
Any
Si
R-Axis
Intrinsic
Dopant
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Fe
Phos
As
Sb
Boron
Undoped
Zn
Ga
Si
Any
Shipping Cassette
Single Wafer Shipper
Growth
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CZ
FZ
VGF
ePak
Orientation
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(100)
(100) -15? towards (111)
(100)
(111)
(110)
(1-102)?2?
(100) 2? TOWARD (110)
(100)-4
(100)-6
(100)-9
(111) Off 2" Towards (110)
(111) Off 4" Towards (110)
Any
Lid/Base/Spring
Resistivity
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>30
0.01-0.02
5000000
Any
.001-.005
.005-.02
.01-.04
<.4
1-3
1-20
1-50
1-100
5-40
6-12
10-60
20-50
50-70
100-200
150-200
>1E7
>100
>1000
> 15000
> 20000
>3000
10000000
4e18
0.01
1000-5000
2000-4000
2000-5000
4000-10000
5000-10000
2k-5k
Thickness
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2000-5000 μm
4000-6000 μm
10-30 μm
40-60 μm
80-100 μm
100-200 μm
140-160 μm
150-200 μm
175-225 μm
180-200 μm
200-250 μm
200-500 μm
225-275 μm
250-300 μm
250-500 μm
275-325 μm
300-350 μm
325-375 μm
330-430 μm
350-400 μm
350-600 μm
375-425 μm
400-450 μm
450-500 μm
475-525 μm
500-550 μm
500-600 μm
550-600 μm
550-650 μm
575-625 μm
600-650 μm
600-800 μm
610-660 μm
650-700 μm
700-750 μm
800-850 μm
800-1000 μm
825-875 μm
850-1000 μm
875-925 μm
950-1000 μm
950-1050 μm
1000-1050 μm
1975-2025 μm
2400-2600 μm
2900-3100 μm
4800-5200 μm
4850-5050 μm
4900-5100 μm
5900-6100 μm
5950-6050 μm
9900-10100 μm
11300-11500 μm
11900-12100 μm
Holds1Wafer
Holds25Wafers
Surface
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P/E/DTOx
P/E/Ni
P/E/WTOx
P/E
P/E/OX
P/P
Grade
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PRIME
TEST
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Clean Room
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1307
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