The Different Methods of Removing Contaminants on GaAs Reclaim Wafers


November 8, 2020

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Contaminants and particulates can form or accumulate on the surfaces of GaAs reclaim wafers. They tend to exhibit adverse effects like higher contact resistance and blocked interfacial reactions, compromising the wafers' performance. Getting rid of these contaminants will help guarantee highly efficient GaAs reclaim wafers. There are different ways to remove these contaminants and unwanted materials.


What are the Different Methods of Removing Contaminants on GaAs Reclaim Wafers?

Sputter Etching on Native Oxide Films

Native oxide layers form over silicon or aluminum when exposed to air. They are used for constructing microsystem devices. But when present in places they should not be, they can affect the GaAs reclaim wafers' quality. Sputter etching or plasma etching can get rid of these native oxides from the wafer. It is performed in the same vacuum setting where the protruding layer will be deposited.

Ultrasonic Scrubbing

Ultrasonic scrubbing involves immersing the reclaimed wafers in a liquid setting that is charged by ultrasonic energy. Furthermore, the sonic mixing causes microscopic bubbles to develop and break down. It then creates shockwaves that loosen and remove the unwanted materials. A filtration system will then separate the particles from the bath.

Mechanical Scrubbing

Mechanical scrubbing uses a brush that spins and skims over the surface at a very high speed. The brush will not directly touch the wafer to get rid of the particles, but the solvent moved by the spinning brush will. Simultaneously, D/I water will be sprayed over the wafers' surfaces to aid in removing the particles.


Looking for GaAs Reclaim Wafers?

Getting rid of unwanted particles and contaminants is essential to guarantee high-quality wafers. So, at Wafer World, we offer a wide range of quality wafers, from reclaim wafers to prime grade wafers. Contact us for inquiries!

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