Doping plays a crucial role in Germanium wafer fabrication. It is the process of adding impurities into a semiconductor crystal to alter its conductivity. In this article, we will discuss the technique used to dope wafers.
Diffusion is a net transport of molecules from an area of higher concentration to another area of lower concentration through random molecular motion. This movement results in a continuous mixing of materials. In a Ge crystal, there's a solid lattice of the atom through which the dopant has to migrate. This can be done in three different ways:
Diffusion with an Exhaustible Source- This means that the dopant is available in a definite supply only. The longer the diffusion process goes on, the lower the concentration is at the surface, which increases the depth of penetration into the wafer.
Diffusion with an Inexhaustible Source- This means that there's an unlimited supply of dopants during the diffusion process. This helps keep the concentration at the surface constant throughout the diffusion process. The particles that have pierced into the wafer are also constantly replenished.
Diffusion plays a crucial role in Germanium wafer fabrication. Get high-quality germanium wafers from Wafer World! Contact us for inquiries!