Several methods can be used to grow single crystal silicon. While there are two current commercial manufacturing methods, there are several other variations of the two main ones. Let’s take a look at some of the methods that go into silicon wafer manufacturing.
In this method, silicon is melted by induction heating without using a quartz crucible. The melted silicon is held by surface tension. One drawback of this method is that it is difficult to produce crystals with a large diameter.
Currently, this is the most widely used method in the manufacture of single crystal silicon for LSIs. Since the melted silicon is held in a quartz crucible, the dissolution of oxygen from the quartz glass is inevitable. Because of this, this method limits the reduction of the oxygen content.
The MCZ method is a variation of the CZ method in which a magnetic field, created by an electromagnet, is applied perpendicularly to the melted silicon surface.
This is another variation of the CZ method in which a magnetic field, created by an electromagnet, is applied parallel to the melted silicon surface.
This is yet another variation of the CZ method, in which a pair of electromagnets are placed on top and bottom to create magnetic fields in opposite directions.
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