Silicon wafer processing involves using highly pure silicon substrates made from single-crystal silicon. Single-crystal silicon is known to possess zero defects that can reduce the lifetimes of minority carriers; that is why they are highly desirable for wafer production. These silicon substrates must have a high degree of chemical purity, high structural uniformity, and a high degree of crystalline perfection. To achieve this level of perfection, it is essential to refine the raw materials and grow the single-crystal silicon using the CZ or FZ method.
The CZ method involves the crystalline solidification of atoms from a liquid phase at a junction. CZ growing during silicon wafer processing include the following steps:
The FZ method involves passing a molten zone through a polysilicon rod. This polysilicon rod has the same measurement as the final ingot. FZ method produces crystals that are highly pure compared to the crystals produced by the CZ method.The FZ process involves the following steps:
Silicon wafer processing involves several steps that are carried out meticulously to produce high-quality wafers. At Wafer World, we offer a wide range of high-quality wafers at a reasonable price. Contact us for a quote!