When it comes to wafer manufacturing, choosing the substrate is more than just about size and cost; it's about crystal physics. Understanding silicon lattice constant (approximately 0.543 nm at room temperature) and the wafer's crystal orientation (100), (110), (111) allows for precise control over manufacturing yield, device performance, and process flexibility.

Silicon’s lattice constant is about 5.431 Å (0.5431 nm) at 300 K.
That single number defines the spacing of atoms in the cubic diamond-structure lattice, which has a direct impact on how dopants occupy sites, strain is managed, epitaxial layers match, and thermal expansion occurs across processing steps.
In wafer manufacturing:
Orientation refers to which crystal plane the wafer surface represents—typically (100), (110), or (111). That choice drives etching behavior, doping profiles, mechanical strength, MEMS channel creation, and ultimately device yield. For example:
Selecting the “wrong” orientation for your architecture means you may pay more in process complexity, yield loss, or device performance penalty.

By aligning your wafer manufacturing strategy around both lattice constant control and crystal orientation, you achieve higher yield and consistency, improved device performance, and, more importantly, process flexibility.
When you know your lattice match and orientation, you can integrate advanced materials, 3D architectures, or MEMS features with greater confidence. Would you like to learn more about the specs of our wafer products? Contact us today to learn how we can meet your project’s needs.