If you’re looking to find an alternative to Czochralski (CZ)-grown silicon, you should take a closer look at the float zone (FZ) wafer. This type of wafer is produced by using a crucible-free crystal growth method that’s commonly known as the floating zone technique. Known for its purity, the FZ wafer offers a set of benefits that you’ll want to learn more about.
Did you know that the presence of oxygen in silicon wafers can trigger a host of negative effects? Since the oxygen content in each float zone silicon wafer is often less than 1017 cm–3, be glad to know that you won’t have to worry about these issues if you choose FZ wafers.
Compared to the Czochralski process, the float zone process has the ability to produce considerably higher growth rates. On average, the growth rates of float zone wafers are about two to three times higher than the growth rates of the Czochralski process. Since higher growth rates are associated with minimal defects, this makes float zone wafers the better choice.
A dopant refers to any impurity that was deliberately added to a wafer to modify the semiconductor’s electrical conductivity. One of the best things about choosing float zone wafers is the fact that they’re able to control the resistivity of the crystal in a very precise manner. This is extremely important for certain applications that make use of the bulk of the silicon wafers in the production of various electronic devices.
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